Google scholar (link)
2024
45. Christopher M Smyth, John M Cain, Alex Boehm, James A Ohlhausen, Mila Nhu Lam, Xiaodong Yan, Stephanie E Liu, Thomas T Zeng, Vinod K Sangwan, Mark C Hersam, Stanley S Chou, Taisuke Ohta, Tzu-Ming Lu. Direct Characterization of Buried Interfaces in 2D/3D Heterostructures Enabled by GeO2 Release Layer, ACS Appl. Mater. Interfaces, 16, 2, 2847, 2024.
2023
44. Xiaodong Yan+, Zhiren Zheng+, Vinod K. Sangwan, Justin H. Qian, Xueqiao Wang, Stephanie E. Liu, Kenji Wantanabe, Takashi Taniguchi, Su-Yang Xu, Pablo Jarillo-Herreo, Qiong Ma, and Mark C. Hersam. Moiré synaptic transistor with room-temperature neuromorphic functionality, Nature, DOI , 2023. (News, News2)
43. Xiaodong Yan+, Justin H. Qian+, Jiahui Ma+, Aoyang Zhang, Stephanie E. Liu, Matthew P. Bland, Kevin J. Liu, Xuechun Wang, Vinod K. Sangwan, Han Wang, and Mark C. Hersam. Reconfigurable mixed-kernel heterojunction transistors for personalized support vector machine classification, Nature Electronics, DOI , 2023.
42. John M. Cain, Xiaodong Yan, Stephanie E. Liu, …, Mark C. Hersam, Stanley S. Chou, and Tzu-Ming Lu. Influence of surface adsorption on MoS2 memtransistor switching kinetics, Applied Physics Letters, 122, 22, 2023.
41. Xiaoyu Sui, Sonal V Rangnekar, …, Xiaodong Yan, …, Mark C. Hersam, and Junhong Chen. Fully Inkjet‐Printed, 2D Materials‐Based Field‐Effect Transistor for Water Sensing, Advanced Materials Technologies, 2301288, 2023.
2022
40. Xiaodong Yan+, Justin H. Qian+, Vinod K. Sangwan, and Mark C. Hersam. Progress and challenges for memtransistors in neuromorphic circuits and systems, Advanced Materials, 2108025, 2022.
39. Christopher M. Smyth, John M. Cain, Eric J. Lang, Ping Lu, Xiaodong Yan, Stephanie E. Liu, Jiangtan Yuan, Matthew P. Bland, Nathan Madden, Taisuke Ohta, Vinod K. Sangwan, Mark C. Hersam, Khalid Hattar, Stanley S. Chou, and Tzu-Ming Lu. Resilience of monolayer MoS2 memtransistor under heavy ion irradiation, Journal of Materials Research 37, 2723, 2022.
2021
38. Xiaodong Yan+, Jiahui Ma+, Tong Wu, Aoyang Zhang, Matthew Chin, Zhihan Zhang, Madan Dubey, Wei Wu, Mike Shuo-Wei Chen, Jing Guo, and Han Wang. Reconfigurable stochastic neurons based on tin oxide/MoS2 hetero-memristors for simulated annealing and the boltzmann machine, Nature Communications, 12, 1, 2021.
37. Linran Fan+, Xiaodong Yan+, Han Wang, and Lihong V. Wang. Real-time observation and control of optical chaos, Science Advances, 7, 3, 8448, 2021.
36. Hefei Liu, Tong Wu, Xiaodong Yan, Jiangbin Wu, Nan Wang, Zhonghao Du, Hao Yang, Buyun Chen, Zhihan Zhang, Fanxin Liu, Wei Wu, Jing Guo, and Han Wang. A tantalum disulfide charge-density-wave stochastic artificial neuron for emulating neural statistical properties, Nano Letters 21, 8, 3465-3472, 2021.
35. Jiangbin Wu, Nan Wang, Xiaodong Yan, and Han Wang. Emerging low-dimensional materials for mid-infrared detection, Nano Research 14, 6, 1863-1877, 2021.
34. Yunwei Ma, Ming Xiao, Yuhao Zhang, Zhonghao Du, Xiaodong Yan, Han Wang, … and Ivan Kravechenko. Kilovolt tri-Gate GaN junction HEMTs with high thermal stability, 2021 33rd International Symposium on Power Semiconductor Devices and ICs, 139-142, 2021.
33. Shan Jiang, Junyeob Song, Yujing Zhang, Meitong Nie, Joogwoon Kim, Ana Marcano, Kelley Kadlec, William Mills III, Xiaodong Yan, … Han Wang, I. Kimbrough, H. Sontheimer, Wei Zhou, and Xiaoting Jia. Nano-optoelectrodes integrated with flexible multifunctional fiber probes by high-throughput scalable fabrication, ACS Applied Materials & Interfaces 13, 7, 2021.
2020
32. Jiangbin Wu, Hung-Yu Chen, Ning Yang, Jun Cao, Xiaodong Yan, Fanxin Liu, Q. Sun, Xi Ling, Jing Guo, and Han Wang. High tunnelling electroresistance in a ferroelectric van der Waals heterojunction via giant barrier height modulation, Nature Electronics, 3, 8, 466-472, 2020.
31. Buyun Chen, Hao Yang, Boxiang Song, Deming Meng, Xiaodong Yan, Yuanrui Li, Y. Wang, Pan Hu, Tse-Hsien Ou, Mark Barnell, Qing Wu, Han Wang, and Wei Wu. A memristor-based hybrid analog-digital computing platform for mobile robotics, Science Robotics, 5, 47, 2020.
30. Ming Xiao, Yunwei Ma, Zhonghao Du, Xiaodong Yan, Ruizhe Zhang, Kai Cheng, Kai Liu, Andy Xie, Edward Beam, Yu Cao, Han Wang, and Yuhao Zhang. 5 kV multi-channel AlGaN/GaN power Schottky barrier diodes with junction-fin-anode, 2020 IEEE International Electron Devices Meeting (IEDM), pp. 5-4, 2020.
29. Ming Xiao, Xiaodong Yan, Jinqiao Xie, Edward Beam, Yu Cao, Han Wang, and Yuhao Zhang. Origin of leakage current in vertical GaN devices with nonplanar regrown p-GaN, Applied Physics Letters, 117, 18, 2020.
28. Yunwei Ma, Ming Xiao, Zhonghao Du, Xiaodong Yan, Kai Cheng, Michael Clavel, Mantu K. Hudait, Ivan Kravchenko, Han Wang, and Yuhao Zhang. Tri-gate GaN junction HEMT, Applied Physics Letters, 117, 14, 2020.
27. Hiu Yung Wong, Ming Xiao, Boyan Wang, Yan Ka Chiu, Xiaodong Yan, Jiahui Ma, Kohei Sasaki, Han Wang, and Yuhao Zhang. TCAD-Machine learning framework for device variation and operating temperature analysis with experimental demonstration, IEEE Journal of the Electron Devices Society, 8, 992-1000, 2020.
26. Hao Yang, Buyun Chen, Boxiang Song, Deming Meng, Subodh Tiwari, Aravind Krishnamoorthy, Xiaodong Yan, … Han Wang, and Wei Wu. Memristive device characteristics engineering by controlling the crystallinity of switching layer materials, ACS Applied Electronic Materials, 2, 6, 1529-1537, 2020.
25. Huan Zhao, Beibei Wang, Fanxin Liu, Xiaodong Yan, Haozhe Wang, … Jing Kong, Rajiv Kalia, and Han Wang. Fluidic Flow Assisted Deterministic Folding of Van der Waals Materials, Advanced Functional Materials, 30, 13, 2020.
24. Ming Xiao, Zhonghao Du, Jinqiao Xie, Edward Beam, Xiaodong Yan, Kai Cheng, Han Wang, Yu Cao, and Yuhao Zhang. Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN, Applied Physics Letters, 116, 5, 2020.
23. Boyan Wang, Ming Xiao, Xiaodong Yan, Hiu Yung Wong, Jiahui Ma, Kohei Sasaki, Han Wang, and Yuhao Zhang. High-voltage vertical Ga2O3 power rectifiers operational at high temperatures up to 600 K, Applied Physics Letters, 115, 26, 2020.
2019
22. Xiaodong Yan, Han Wang, and Ivan Sanchez Esqueda. Temperature-dependent transport in ultrathin black phosphorus field-effect transistors, Nano Letters, 19, 482-487, 2019.
21. Noah Allen, Ming Xiao, Xiaodong Yan, Kohei Sasaki, Marko Tadjer, Jiahui Ma, Ruizhe Zhang, Han Wang, and Yuhao Zhang. Vertical Ga2O3 schottky barrier diodes with small-angle beveled field plates: a Baliga’s figure-of-merit of 0.6 GW/cm2, IEEE Electron Device Letters, 40, 9, 2019.
2018
20. Xiaodong Yan, Ivan Sanchez Esqueda, Jiahui Ma, Jesse Tice, and Han Wang. High breakdown electric field in beta-Ga2O3/graphene vertical barristor heterostructure, Applied Physics Letters, 112, 032101, 2018. (featured in Editor’s Pick)
19. Xiaodong Yan, Han Wang, Hugh Barnaby, and Ivan Sanchez Esqueda. Impact ionization and interface trap generation in 28-nm MOSFETs at cryogenic temperatures, IEEE Transaction on Device and Materials Reliability, 18, 456-462, 2018.
18. Ivan S. Esqueda, Xiaodong Yan, Chris Rutherglen, Alex Kane, Tyler Cain, Phil Marsh, Q. Liu, Kosmas Galatsis, Han Wang, and Chongwu Zhou. Aligned carbon nanotube synaptic transistors for large-scale neuromorphic computing, ACS Nano, 12, 7352-7361, 2018.
2017
17. Ivan S. Esqueda, He Tian, Xiaodong Yan, and Han Wang. Transport properties and device prospects of ultra-thin black phosphorus on hexagonal boron nitride, IEEE Transactions on Electron Devices, 64, 12, 2017
16. Huan Zhao, Zhipeng Dong, He Tian, Don DiMarzi, Myung-Geun Han, Lihua Zhang, Xiaodong Yan, Fanxin Liu, Lang Shen, Shu-Jen Han, Steve Cronin, Wei Wu, Jesse Tice, Jing Guo, and Han Wang. Atomically-thin femtojoule memristive device, Advanced Materials, 29, 47, 2017.
15. He Tian, Xi Cao, Yujun Xie, Xiaodong Yan, Andrew Kostelec, Don DiMarzio, Cheng Chang, Li-Dong Zhao, Wei Wu, Jesse Tice, Judy J. Cha, Jing Guo, and Han Wang. Emulating bilingual synaptic response using junction based artificial synaptic device”, ACS Nano, 11, 7, 2017.
14. Bolin Liao, Huan Zhao, Ebrahim Najafi, Xiaodong Yan, He Tian, Jesse Tice, Austin Minnich, Han Wang, Ahmed H. Zewail. Spatial-temporal imaging of anisotropic photocarrier dynamics in black phosphorus, Nano Letters, 17, 6, 2017.
13. Meng Qi, Guowang Li, Satyaki Ganguly, Pei Zhao, Xiaodong Yan, Jai Verma, Bo Song, Mingda Zhu, Kazuki Nomoto, Huili Grace Xing, and Debdeep Jena. Strained GaN quantum-well FETs on single crystal bulk AlN substrates”, Applied Physics Letters, 110, 6, 2017.
2016
12. He Tian, Bingchen Deng, Matthew L. Chin, Xiaodong Yan, Hao Jiang, Shu-Jen Han, Vivian Sun, Qiangfei Xia, Madan Dubey, Fengnian Xia, and Han Wang. A dynamically reconfigurable ambipolar black phosphorus memory device, ACS Nano, 10, 11, 2016.
11. He Tian, Jesse Tice, R. Fei, Vy Tran, Xiaodong Yan, Li Yang, and Han Wang. Low-symmetry two-dimensional materials for electronic and photonic applications, Nano Today,11, 6, 2016.
10. Song Bo, Mingda Zhu, Z. Hu, Meng Qi, Kazuki Nomoto, Xiaoodng Yan, Yu Cao, Debdeep Jena, and Huili Grace Xing, Ultralow-leakage AlGaN/GaN high electron mobility transistors on Si with non-alloyed regrown ohmic contacts, IEEE Electron Device Letters, 37, 1, 2016.
2015
9. Xiaodong Yan, Wenjun Li, SM Islam, Kasra Pourang, Huili Grace Xing, Patrick Fay, and Debdeep Jena. Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions, Applied Physics Letters, 107, 16, 2015.
8. Meng Qi, Kazuki Nomoto, Mingda Zhu, Zongyang Hu, Yuning Zhao, Vlad Protasenko, Bo Song, Xiaodong Yan, … Patrick Fay, Huili Grace Xing, and Debdeep Jena. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy, Applied Physics Letters, 107, 23, 2015.
7. Wenjun Li, Saima Sharmin, Hesameddin Ilatikhameneh, Rajib Rahman, Yeqing Lu, Jingshan Wang, Xiaodong Yan, Alan Seabaugh, Gerhard Klimeck, Debdeep Jena, and Patrick Fay. Polarization-engineered III-nitride heterojunction tunnel field-effect transistors, IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 99, 24, 2015.
6. Mingda Zhu, Bo Song, Meng Qi, Zongyang Hu, Kazuki Nomoto, Xiaodong Yan, Yu Cao, Wayne Johnson, Erhard Kohn, Debdeep Jena, and Huili Grace Xing. 1.9-kV AlGaN/GaN lateral schottky barrier diodes on silicon, IEEE Electron Device Letters, 36, 4, 2015.
5. Meng Qi, Guowang Li, Vlad Protasenko, Pei Zhao, Jai Verma, Bo Song, Satyaki Ganguly, Mingda Zhu, Zongyang Hu, Xiaodong Yan, Alex Mintairov, Huili Grace Xing, and Debdeep Jena. Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and 15N isotopes, Applied Physics Letters, 106, 4, 2015.
2014
4. Yuanzheng Yue, Xiaodong Yan, Wenjun Li, Huili Grace Xing, Debdeep Jena, and Patrick Fay. Faceted sidewall etching of n-GaN on sapphire by photoelectrochemical wet processing, Journal of Vacuum Science and Technology B, 32, 6, 2014.
3. Guowang Li, Bo Song, Satyaki Ganguly, Mingda Zhu, Ronghua Wang, Xiaodong Yan, Jai Verma, Vlad Protasenko, Huili Grace Xing, and Debdeep Jena. Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN, Applied Physics Letters, 104, 19, 2014.
2011
2. Chengcheng Huang, Fujun Xu, Xiaodong Yan, … Xinqiang Wang, Bo Shen. Intersubband transitions at atmospheric window in AlxGa1-xN/GaN multiple quantum wells grown on GaN/sapphire templates adopting AlN/GaN superlattices interlayer, Applied Physics Letters, 98, 13, 2011.
1. Jie Song, Fujun Xu, Xiaodong Yan, Fan Lin, Chengcheng Huang, … Xinqiang Wang, Bo Shen, K.Wei, and X. Y. Liu. High conductive gate leakage current channels induced by in-segregation around screw- and mixed-type threading dislocations in lattice-matched InxAl1-xN/GaN heterostructures, Applied Physics Letters, 97, 23, 2010.